"uuid","repository link","title","author","contributor","publication year","abstract","subject topic","language","publication type","publisher","isbn","issn","patent","patent status","bibliographic note","access restriction","embargo date","faculty","department","research group","programme","project","coordinates"
"uuid:f8a03813-2579-455d-87f0-7b4ae73ed7fe","http://resolver.tudelft.nl/uuid:f8a03813-2579-455d-87f0-7b4ae73ed7fe","Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection","Zhang, Jian (Fudan University; Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology; State Key Laboratory of Solid State Lighting); Chen, Ganhui (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Zhu, Yumeng (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Qi, Yongle (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Lin, Xinpeng (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Li, Wenmao (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Zhang, G. (TU Delft Signal Processing Systems); Jiang, Yu-Long (Fudan University); Yu, Hongyu (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor)","","2019","In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.","AlGaN/GaN; Gas sensor; H2S; HEMT; Pt","en","journal article","","","","","","Accepted author manuscript","","2020-10-16","","","Electronic Components, Technology and Materials","","",""
"uuid:2a30fbba-fd5d-40de-9630-1f72ee874711","http://resolver.tudelft.nl/uuid:2a30fbba-fd5d-40de-9630-1f72ee874711","Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching","Sokolovskij, R. (TU Delft Beijing Delft Institute of Intelligent Science and Technology; TU Delft Electronic Components, Technology and Materials); Sun, J. (Beijing Research Center); Santagata, F. (Peking University; Guangdong Dongguan Quality Supervision Testing Center); Iervolino, E. (Peking University; Guangdong Dongguan Quality Supervision Testing Center); Li, S. (Peking University); Zhang, G.Y. (Peking University); Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)","","2016","A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O2 plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very slow etching rate (∼0.38nm/cycle), limited by oxidation depth. The proposed approach allows fine control of the oxidation enabling the formation of accurately controlled recess of very thin (20∼30nm) barrier layers. With optimized power settings, etch rates from ∼0.6 to ∼11nm/cycle were obtained. AFM results did not show any increase in surface roughness after etching, indicating that surface quality of the etched layer was not affected by the etching process.","AlGaN/GaN; cyclic etch; gate recess; HEMT; HEMT-sensor; ICP-RIE; plasma oxidation; semiconductor sensor","en","journal article","","","","","","","","","","","Beijing Delft Institute of Intelligent Science and Technology","","",""