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Cai, Miao (author), Cui, Peng (author), Qin, Yikang (author), Geng, Daoshuang (author), Wei, Qiqin (author), Wang, Xiyou (author), Yang, Daoguo (author), Zhang, Kouchi (author)Understanding the defect characterization of electronic and mechanical components is a crucial step in diagnosing component lifetime. Technologies for determining reliability, such as thermal modeling, cohesion modeling, statistical distribution, and entropy generation analysis, have been developed widely. Defect analysis based on the...review 2020
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Dai, Hanqing (author), Xu, Wenqian (author), Hu, Zhe (author), Chen, Yuanyuan (author), Wei, Xian (author), Yang, Bobo (author), Chen, Zhihao (author), Gu, Jing (author), Yang, Dan (author), Xie, Fengxian (author), Zhang, Wanlu (author), Guo, Ruiqian (author), Zhang, Kouchi (author), Wei, Wei (author)All-solid-state sodium-ion batteries (SIBs) possess the advantages of rich resources, low price, and high security, which are one of the best alternatives for large-scale energy storage systems in the future. Also, the chalcogenide solid electrolytes (CSEs) of SIBs have the characteristics of excellent room-temperature ionic conductivity (10...review 2020
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Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Lu, Jiang (author), Tian, Xiaoli (author), Wei, Ke (author), Wu, Hao (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...review 2019