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Zhang, Jian (author), Sokolovskij, R. (author), Chen, Ganhui (author), Zhu, Yumeng (author), Qi, Yongle (author), Lin, Xinpeng (author), Li, Wenmao (author), Zhang, G. (author), Jiang, Yu-Long (author), Yu, Hongyu (author)
In this paper, a method to extend the detection range of hydrogen sulfide (H<sub>2</sub>S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H<sub>2</sub>S exposure in dry air. A pre...
journal article 2019
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Sokolovskij, R. (author), Zhang, Jian (author), Iervolino, E. (author), Zhao, Changhui (author), Santagata, F. (author), Wang, F. (author), Yu, Hongyu (author), Sarro, P.M. (author), Zhang, G.Q. (author)
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H<sub>2</sub>S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...
journal article 2018
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Sokolovskij, R. (author), Sun, J. (author), Santagata, F. (author), Iervolino, E. (author), Li, S. (author), Zhang, G.Y. (author), Sarro, P.M. (author), Zhang, G.Q. (author)
A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O<sub>2</sub> plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...
journal article 2016