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Kiene, G. (author), Overwater, R.W.J. (author), Babaie, M. (author), Sebastiano, F. (author)
This paper presents a floating inverter amplifier (FIA) that performs high-linearity amplification and sampling while driving a 2<inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> time-interleaved (TI) SAR ADC, operating from room temperature (RT) down to 4.2 K. The power-efficient FIA...
journal article 2023
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Laursen, Kjeld (author), Zamani, M. (author), Rezaeiyan, Y. (author), Hosseini, Seyedsina (author), Mondal, Tanmay (author), Corbett, Brian (author), Ouagazzal, Abdel Mouttalib (author), Amalric, Marianne (author), Moradi, Farshad (author)
This brief presents an ultrasonically powered micro-system for deep tissue optogenetic stimulation. The developed system is composed of a Base for Powering and Controlling (BPC) and an implantable Dust for optogenetics and drug delivery. The Dust consists of a piezoelectric crystal, a rectifier chip, and a micro-scale custom-designed light...
journal article 2023
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Middelburg, L.M. (author), el Mansouri, B. (author), Poelma, René H. (author), van Zeijl, H.W. (author), Wei, J. (author), Zhang, Kouchi (author), van Driel, W.D. (author)
The mechanical part of inertial sensors can be designed to have a large mechanical sensitivity, but also requires the transduction mechanism which translates this displacement. The overall system resolution in mechanical inertial sensors is dictated by the noise contribution of each stage and the magnitude of each sensitivity, see also Figure...
conference paper 2018
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Cui, Z. (author), Chen, Xianping (author), Fan, Xuejun (author), Zhang, Kouchi (author)
Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In...
conference paper 2018
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Cui, Z. (author), Zhang, Yingying (author), Yang, Qun (author), Zhang, Kouchi (author), Chen, Xianping (author)
Interfacial properties of Cu/SiO<sub>2</sub> in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO<sub>2</sub>. The...
conference paper 2018
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Vollebregt, S. (author), Alfano, B. (author), Ricciardella, F. (author), Giesbers, A.J.M. (author), Hagendoorn, Y. (author), van Zeijl, H.W. (author), Polichetti, T (author), Sarro, Pasqualina M (author)
In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement...
conference paper 2016
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