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Hrauda, N. (author), Zhang, J.J. (author), Stangl, J. (author), Rehman-Khan, A. (author), Bauer, G. (author), Stoffel, M. (author), Schmidt, O.G. (author), Jovanovich, V. (author), Nanver, L.K. (author)
In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...
journal article 2009
document
Hrauda, N. (author), Zhang, J.J. (author), Stoffel, M. (author), Stangl, J. (author), Bauer, G. (author), Rehman-Khan, A. (author), Holy, V. (author), Schmidt, O.G. (author), Jovanovic, V. (author), Nanver, L.K. (author)
We report on studies of strain and composition of two-dimensionally ordered SiGe islands grown by molecular beam epitaxy using high resolution x-ray diffraction. To ensure a small size distribution of the islands, pit-patterned 4 (001) Si wafers were used as substrates. The Si wafers were patterned by optical lithography and reactive ion etching...
journal article 2009
document
Zhang, J.J. (author), Stoffel, M. (author), Rastelli, A. (author), Schmidt, O.G. (author), Jovanovi?, V. (author), Nanver, L.K. (author), Bauer, G. (author)
The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and...
journal article 2007
document
Molenkamp, L.W. (author), Schmidt, G. (author), Bauer, G.E.W. (author)
journal article 2001
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