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Han, L. (author), Theuwissen, A.J.P.A.M. (author)This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional first-order IIR filter is implemented to improve the output swing. The conversion gain, full...journal article 2021
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...journal article 2015
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Burri, S. (author), Maruyama, Y. (author), Michalet, X. (author), Regazzoni, F. (author), Bruschini, C. (author), Charbon, E. (author)We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....journal article 2014
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Mata Pavia, J. (author), Wolf, M. (author), Charbon, E. (author)Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel’s surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanche diode (SPAD) imager to enhance its sensitivity. The benefit and limitations of these...journal article 2014
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Li, D.D.U. (author), Arlt, J. (author), Tyndall, D. (author), Walker, R. (author), Richardson, J. (author), Stoppa, D. (author), Charbon, E. (author), Henderson, R.K. (author)A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 ?m complementary metaloxide-semiconductor single-photon...journal article 2011
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Rosticher, M. (author), Ladan, F.R. (author), Maneval, J.P. (author), Dorenbos, S.N. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Lupa?cu, A. (author), Nogues, G. (author)We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an...journal article 2010
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Li, D.U. (author), Arlt, J. (author), Richardson, J. (author), Walker, R. (author), Buts, A. (author), Stoppa, D. (author), Charbon, E. (author), Henderson, R. (author)A compact real-time fluorescence lifetime imaging microscopy (FLIM) system based on an array of low dark count 0.13?m CMOS singlephoton avalanche diodes (SPADs) is demonstrated. Fast background-insensitive fluorescence lifetime determination is achieved by use of a recently proposed algorithm called ‘Integration for Extraction Method’ (IEM) [J....journal article 2010