"uuid","repository link","title","author","contributor","publication year","abstract","subject topic","language","publication type","publisher","isbn","issn","patent","patent status","bibliographic note","access restriction","embargo date","faculty","department","research group","programme","project","coordinates" "uuid:d8cf233f-316a-4567-821f-aecf7dd1d244","http://resolver.tudelft.nl/uuid:d8cf233f-316a-4567-821f-aecf7dd1d244","High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology","Lee, M.J. (TU Delft (OLD)Applied Quantum Architectures; Swiss Federal Institute of Technology); Ronchini Ximenes, A. (TU Delft (OLD)Applied Quantum Architectures); Padmanabhan, P. (TU Delft (OLD)Applied Quantum Architectures; Swiss Federal Institute of Technology); Wang, Tzu Jui (Taiwan Semiconductor Manufacturing Company (TSMC)); Huang, Kuo Chin (Taiwan Semiconductor Manufacturing Company (TSMC)); Yamashita, Yuichiro (Taiwan Semiconductor Manufacturing Company (TSMC)); Yaung, Dun Nian (Taiwan Semiconductor Manufacturing Company (TSMC)); Charbon-Iwasaki-Charbon, E. (Swiss Federal Institute of Technology; Kavli institute of nanoscience Delft)","","2018","We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P+/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus enabling lower tunneling noise and better timing jitter as well as a higher photon detection efficiency and a wider spectrum. In order to prevent premature edge breakdown, a P-type guard ring is formed at the edge of the junction, and it is optimized to achieve a wider photon-sensitive area. In addition, metal-1 is used as a light reflector to improve the detection efficiency further in backside illumination. With the optimized 3-D stacked 45-nm CMOS technology for back-illuminated image sensors, the proposed SPAD achieves a dark count rate of 55.4 cps/μm2 and a photon detection probability of 31.8% at 600 nm and over 5% in the 420-920 nm wavelength range. The jitter is 107.7 ps full width at half-maximum with negligible exponential diffusion tail at 2.5 V excess bias voltage at room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3-D stacked SPAD technologies.","Avalanche photodiode (APD); CMOS image sensor; detector; Geiger-mode avalanche photodiode (G-APD); image sensor; integrated optics device; integrated photonics; light detection and ranging (LiDAR); low light level; optical sensor; photodiode; photomultiplier; photon counting; photon timing; semiconductor; sensor; silicon; single-photon avalanche diode (SPAD); single-photon imaging; standard CMOS technology; three-dimensional fabrication; three-dimensional vision","en","journal article","","","","","","","","","","","(OLD)Applied Quantum Architectures","","",""