"uuid","repository link","title","author","contributor","publication year","abstract","subject topic","language","publication type","publisher","isbn","issn","patent","patent status","bibliographic note","access restriction","embargo date","faculty","department","research group","programme","project","coordinates" "uuid:a420a326-a751-4815-8144-136911eb5fda","http://resolver.tudelft.nl/uuid:a420a326-a751-4815-8144-136911eb5fda","Solid-phase crystallization of ultra high growth rate amorphous silicon films","Sharma, K.; Ponomarev, M.V.; Verheijen, M.A.; Kunz, O.; Tichelaar, F.D.; Van de Sanden, M.C.M.; Creatore, M.","","2012","In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.","crystallisation; elemental semiconductors; grain size; plasma materials processing; silicon","en","journal article","American Institute of Physics","","","","","","","","Applied Sciences","QN/Quantum Nanoscience","","","",""