On the formation mechanisms of the diffuse atmospheric pressure dielectric barrier discharge in CVD processes of thin silica-like films

Pathways of formation and temporal evolution of the diffuse dielectric barrier discharge at atmospheric pressure were experimentally studied in this work by means of optical (fast imaging camera) and electrical diagnostics. The chosen model system is relevant for applications of plasma-enhanced chemical vapor deposition of thin silica-like film...

Solid-phase crystallization of ultra high growth rate amorphous silicon films

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...