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Transport through a single donor in p-type silicon
Balanced ternary addition using a gated silicon nanowire
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Coherent transport through a double donor system in silicon
Subthreshold channels at the edges of nanoscale triple-gate silicon transistors
Enhanced tunneling across nanometer-scale metal–semiconductor interfaces
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