"uuid","repository link","title","author","contributor","publication year","abstract","subject topic","language","publication type","publisher","isbn","issn","patent","patent status","bibliographic note","access restriction","embargo date","faculty","department","research group","programme","project","coordinates" "uuid:f8a03813-2579-455d-87f0-7b4ae73ed7fe","http://resolver.tudelft.nl/uuid:f8a03813-2579-455d-87f0-7b4ae73ed7fe","Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection","Zhang, Jian (Fudan University; Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology; State Key Laboratory of Solid State Lighting); Chen, Ganhui (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Zhu, Yumeng (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Qi, Yongle (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Lin, Xinpeng (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Li, Wenmao (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor); Zhang, G. (TU Delft Signal Processing Systems); Jiang, Yu-Long (Fudan University); Yu, Hongyu (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor)","","2019","In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.","AlGaN/GaN; Gas sensor; H2S; HEMT; Pt","en","journal article","","","","","","Accepted author manuscript","","2020-10-16","","","Electronic Components, Technology and Materials","","",""