Searched for: +
(1 - 20 of 36)

Pages

List view
Grid view
document
Yang, G. (author), Van Swaaij, R.A.C.M.M. (author), Isabella, O. (author)
The present invention relates to a new method of texturing a glass surface. In further aspects, the present invention relates to the resulting textured glass surface; to a photovoltaic device comprising the textured glass surface; and, to use of the textured glass surface for scattering light.
patent 2015
document
Yang, G. (author), Ingenito, A. (author), van Hameren, Nienke (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low...
journal article 2016
document
Yang, G. (author), Ingenito, A. (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of...
journal article 2016
document
Yang, G. (author), Zhang, Y. (author), Procel Moya, P.A. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
Highest conversion efficiency in crystalline silicon (c-Si) solar cells can be enabled by quenching minority carriers' recombination at c-Si/contact interface owing to carrier-selective passivating contacts. With the semi-insulating poly-crystalline silicon (SIPOS, poly-Si) a very good passivation of c-Si surfaces was obtained. We have...
journal article 2017
document
Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
The poly-Si carrier-selective passivating contacts (CSPCs) parasitically absorb a substantial amount of light, especially in the form of free carrier absorption. To minimize these losses, we developed CSPCs based on oxygen-alloyed poly-Si (poly-SiO<sub>x</sub>) and deployed them in c-Si solar cells. Transmission electron microscopy analysis...
journal article 2018
document
Procel Moya, P.A. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)
In this work we present a theoretical analysis of charge carriers transport mechanisms in IBC-SHJ solar cells. The concepts of contact and transport selectivity are correlated through the band bending at c-Si interface and are used to identify thin-film silicon parameters affecting fill factor (FF) and open-circuit voltage (V<sub>OC</sub>)....
journal article 2018
document
Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Limodio, G. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...
journal article 2018
document
Han, C. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Procel Moya, P.A. (author), Tijssen, M. (author), Bento Montes, A.R. (author), Isabella, O. (author), Zeman, M. (author)
Broadband transparent conductive oxide layers with high electron mobility (μ<sub>e</sub>) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In<sub>2</sub>O<sub>3</sub> thin films with high μ<sub>e</sub> (&gt;60 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) have been extensively...
journal article 2019
document
Limodio, G. (author), Yang, G. (author), Ge, H. (author), Procel Moya, P.A. (author), de Groot, Y. (author), Mazzarella, L. (author), Isabella, O. (author), Zeman, M. (author)
In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO<sub>x</sub> hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...
journal article 2019
document
Limodio, G. (author), D'Herouville, G. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)
This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO <sub>3</sub> which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal...
journal article 2019
document
Procel Moya, P.A. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)
This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical...
journal article 2019
document
Mazzarella, L. (author), Alcañiz Moya, A. (author), Kawa, Eliora (author), Procel Moya, P.A. (author), Zhao, Y. (author), Han, C. (author), Yang, G. (author), Zeman, M. (author), Isabella, O. (author)
Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical...
conference paper 2020
document
Mazzarella, L. (author), Alcañiz Moya, A. (author), Procel Moya, P.A. (author), Kawa, Eliora (author), Zhao, Y. (author), Tiringer, U. (author), Han, C. (author), Yang, G. (author), Taheri, P. (author), Zeman, M. (author), Isabella, O. (author)
Molybdenum oxide (MoO<sub>x</sub>) is attractive for applications as hole-selective contact in silicon heterojunction solar cells for its transparency and relatively high work function. However, the integration of MoO<sub>x</sub> stacked on intrinsic amorphous silicon (i)a-Si:H layer usually exhibits some issues that are still not fully...
journal article 2020
document
Zhao, Y. (author), Mazzarella, L. (author), Procel Moya, P.A. (author), Han, C. (author), Yang, G. (author), Weeber, A.W. (author), Zeman, M. (author), Isabella, O. (author)
Hydrogenated nanocrystalline silicon oxide (nc-SiO<sub>x</sub>:H) layers exhibit promising optoelectrical properties for carrier-selective-contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c-Si) passivation quality is technologically challenging for growing thin...
journal article 2020
document
Limodio, G. (author), Yang, G. (author), De Groot, Yvar (author), Procel, Paul (author), Mazzarella, L. (author), Weber, Arthur W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we develop SiO<sub>x</sub>/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...
journal article 2020
document
Singh, M. (author), Santbergen, R. (author), Mazzarella, L. (author), Madrampazakis, A. (author), Yang, G. (author), Vismara, R. (author), Remes, Z. (author), Weeber, A.W. (author), Zeman, M. (author), Isabella, O. (author)
The optical modelling for optimizing high-efficiency c-Si solar cells endowed with poly-SiO<sub>x</sub> or poly-SiC<sub>x</sub> carrier-selective passivating contacts (CSPCs) demands a thorough understanding of their optical properties, especially their absorption coefficient. Due to the mixed phase nature of these CSPCs, spectroscopic...
journal article 2020
document
Procel Moya, P.A. (author), Xu, Haiyuan (author), Saez, Aurora (author), Ruiz Tobon, C.M. (author), Mazzarella, L. (author), Zhao, Y. (author), Han, C. (author), Yang, G. (author), Zeman, M. (author), Isabella, O. (author)
The contact resistivity is a key parameter to reach high conversion efficiency in solar cells, especially in architectures based on the so-called carrier-selective contacts. The importance of contact resistivity relies on the evaluation of the quality of charge collection from the absorber bulk through adjacent electrodes. The electrode...
journal article 2020
document
Han, C. (author), Yang, G. (author), Montes, Ana (author), Procel Moya, P.A. (author), Mazzarella, L. (author), Zhao, Y. (author), Eijt, S.W.H. (author), Schut, H. (author), Zhang, Xiaodan (author), Zeman, M. (author), Isabella, O. (author)
In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage...
journal article 2020
document
Han, C. (author), Zhao, Y. (author), Mazzarella, L. (author), Santbergen, R. (author), Bento Montes, A.R. (author), Procel Moya, P.A. (author), Yang, G. (author), Zhang, Xiaodan (author), Zeman, M. (author), Isabella, O. (author)
The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. The opto-electrical properties of the IWO were manipulated when deposited on top of thin-film silicon...
journal article 2021
document
Yang, G. (author), Van de Loo, Bas (author), Stodolny, Maciej (author), Limodio, G. (author), Melskens, Jimmy (author), Isabella, O. (author), Weeber, A.W. (author), Zeman, M. (author), Kessels, W. M.M. (author)
Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results...
journal article 2021
Searched for: +
(1 - 20 of 36)

Pages

List view
Grid view