Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...

Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...

Noise temperature and beam pattern of an NbN hot electron bolometer mixer at 5.25 THz

We report the measured sensitivities of a superconducting NbN hot electron bolometer (HEB) heterodyne receiver at 5.25 THz. Terahertz (THz) radiation is quasioptically coupled to a HEB mixer with a lens and a spiral antenna. Using a measurement setup with black body calibration sources and a beam splitter in vacuo, and an antireflection coated...