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Sun, J. (author), Zhan, Teng (author), Sokolovskij, R. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....
journal article 2021
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Sun, J. (author), Hu, D. (author), Liu, Zewen (author), Middelburg, L.M. (author), Vollebregt, S. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures was demonstrated. To validate the proposed concept of the AlGaN/GaN vacuum sensor, a 700 µm diameter circular membrane was electrically characterized under applied...
journal article 2020
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Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Santagata, F. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working...
journal article 2019
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Zhang, Jian (author), Sokolovskij, R. (author), Chen, Ganhui (author), Zhu, Yumeng (author), Qi, Yongle (author), Lin, Xinpeng (author), Li, Wenmao (author), Zhang, G. (author), Jiang, Yu-Long (author), Yu, Hongyu (author)
In this paper, a method to extend the detection range of hydrogen sulfide (H<sub>2</sub>S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H<sub>2</sub>S exposure in dry air. A pre...
journal article 2019
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Sokolovskij, R. (author), Zhang, Jian (author), Iervolino, E. (author), Zhao, Changhui (author), Santagata, F. (author), Wang, F. (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H<sub>2</sub>S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...
journal article 2018
document
Sokolovskij, R. (author), Sun, J. (author), Santagata, F. (author), Iervolino, E. (author), Li, S. (author), Zhang, G.Y. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O<sub>2</sub> plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...
journal article 2016
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