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Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Limodio, G. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...
journal article 2018
document
Limodio, G. (author), D'Herouville, G. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)
This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO <sub>3</sub> which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal...
journal article 2019
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Limodio, G. (author), Yang, G. (author), Ge, H. (author), Procel Moya, P.A. (author), de Groot, Y. (author), Mazzarella, L. (author), Isabella, O. (author), Zeman, M. (author)
In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO<sub>x</sub> hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...
journal article 2019
document
Limodio, G. (author), Yang, G. (author), De Groot, Yvar (author), Procel, Paul (author), Mazzarella, L. (author), Weber, Arthur W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we develop SiO<sub>x</sub>/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...
journal article 2020
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