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Yang, G. (author), Ingenito, A. (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of...
journal article 2016
Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Limodio, G. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...
journal article 2018