Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON...

Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...