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De Franceschi, S. (author), Van Dam, J.A. (author), Bakkers, E.P.A.M. (author), Feiner, L.F. (author), Gurevich, L. (author), Kouwenhoven, P. (author)
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires...
journal article 2003
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Van den Berg, J.W.G. (author), Nadj-Perge, S. (author), Pribiag, V.S. (author), Plissard, S.R. (author), Bakkers, E.P.A.M. (author), Frolov, S.M. (author), Kouwenhoven, L.P. (author)
Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed...
journal article 2013
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Bulgarini, G. (author), Reimer, M.E. (author), Zehender, T. (author), Hocevar, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire...
journal article 2012
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Kouwenhoven, L. (author), Mooij, J.E. (author)
e present an excerpt of the document “Quantum Information Processing and Communication: Strategic report on current status, visions and goals for research in Europe”, which has been recently published in electronic form at the website of FET (the Future and Emerging Technologies Unit of the Directorate General Information Society of the European...
journal article 2005
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Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)
We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...
journal article 2009
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Scheffler, M. (author), Nadj-Perge, S. (author), Kouwenhoven, L.P. (author), Borgström, M.T. (author), Bakkers, E.P.A.M. (author)
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within...
journal article 2009
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Janssen, J.W. (author), Lemay, S.G. (author), Kouwenhoven, L.P. (author), Dekker, C. (author)
journal article 2002
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Van Tilburg, J.W.W. (author), Algra, R.E. (author), Immink, W.G.G. (author), Verheijen, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author)
We report the growth and characterization of InAs nanowires capped with a 0.5–1 nm epitaxial InP shell. The low-temperature field-effect mobility is increased by a factor 2–5 compared to bare InAs nanowires. We extract the highest low-temperature peak electron mobilities obtained for nanowires to this date, exceeding 20 000 cm2 V s?1. The...
journal article 2010
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Meunier, T. (author), Vink, I.T. (author), Willems van Beveren, L.H. (author), Koppens, F.H.L. (author), Tranitz, H.P. (author), Wegscheider, W. (author), Kouwenhoven, L.P. (author), Vandersypen, L.M.K. (author)
We propose and implement a nondestructive measurement that distinguishes between two-electron spin states in a quantum dot. In contrast to earlier experiments with quantum dots, the spins are left behind in the state corresponding to the measurement outcome. By measuring the spin states twice within a time shorter than the relaxation time T1,...
journal article 2006
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Staring, A.A.M. (author), Molenkamp, L.W. (author), Beenakker, C.W.J. (author), Kouwenhoven, L.P. (author), Foxon, C.T. (author)
journal article 1990
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Kervennic, Y.V. (author), Van der Zant, H.S.J. (author), Morpurgo, A.F. (author), Gurevich, L. (author), Kouwenhoven, L.P. (author)
We have fabricated pairs of platinum electrodes with separation between 20 and 3.5 nm. Our technique combines electron beam lithography and chemical electrodeposition. We show that the measurement of the conductance between the two electrodes through the electrolyte provides an accurate and reproducible way to control their separation. We have...
journal article 2002
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Mulder, J. (author), Kouwenhoven, M.H.L. (author), Serdijn, W.A. (author), Van Der Woerd, A.C. (author), Van Roermund, A.H.M. (author)
journal article 1999
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Nadj-perge, S. (author), Pribiag, V.S. (author), Van den Berg, J.W.G. (author), Zuo, K. (author), Plissard, S.R. (author), Bakkers, E.P.A.M. (author), Frolov, S.M. (author), Kouwenhoven, L.P. (author)
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to...
journal article 2012
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Venema, L.C. (author), Janssen, J.W. (author), Buitelaar, M.R. (author), Wildoer, J.W.G. (author), Lemay, S.G. (author), Kouwenhoven, L.P. (author), Dekker, C. (author)
journal article 2000
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Recher, P. (author), Nazarov, Y.V. (author), Kouwenhoven, L.P. (author)
We consider an optical quantum dot where an electron level and a hole level are coupled to respective superconducting leads. We find that electrons and holes recombine producing photons at discrete energies as well as a continuous tail. Further, the spectral lines directly probe the induced superconducting correlations on the dot. At energies...
journal article 2010
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Hanson, R. (author), Vandersypen, L.M.K. (author), van Beveren, L.M.W, (author), Elzerman, J.M. (author), Vink, I.T. (author), Kouwenhoven, L.P. (author)
journal article 2004
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Van der Wiel, W.G. (author), De Franceschi, S. (author), Elzerman, J.M. (author), Tarucha, S. (author), Kouwenhoven, L.P. (author), Motohisa, J. (author), Nakajima, F. (author), Fukui, T. (author)
journal article 2002
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Motohisa, J. (author), Nakajima, F. (author), Fukui, T. (author), Van der Wiel, W.G. (author), Elzerman, J.M. (author), De Franceschi, S. (author), Kouwenhoven, L.P. (author)
We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and...
journal article 2002
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Onac, E. (author), Balestro, F. (author), vanBeveren, L.H.W. (author), Hartmann, U. (author), Nazarov, Y.V. (author), Kouwenhoven, L.P. (author)
journal article 2006
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Wald, K.R. (author), Kouwenhoven, L.P. (author), McEuen, P.L. (author), van der Vaart, N.C. (author), Foxon, C.T. (author)
journal article 1994
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