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Nguyen, Binh Minh (author), Kiselev, Andrey A. (author), Noah, Ramsey (author), Yi, Wei (author), Qu, F. (author), Beukman, A.J.A. (author), de Vries, F.K. (author), van Veen, J. (author), Nadj-Perge, S. (author), Kouwenhoven, Leo P. (author), Kjaergaard, Morten (author), Suominen, Henri J. (author), Nichele, Fabrizio (author), Marcus, Charles M. (author), Manfra, Michael J. (author), Sokolich, Marko (author)A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the...journal article 2016
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Qu, F. (author), Beukman, A.J.A. (author), Nadj-Perge, S. (author), Wimmer, M.T. (author), Nguyen, B.M. (author), Yi, W. (author), Thorp, J. (author), Sokolich, M. (author), Kiselev, A.A. (author), Manfra, M.J. (author), Marcus, C.M. (author), Kouwenhoven, L.P. (author)Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be...journal article 2015
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Yi, W. (author), Kiselev, A.A. (author), Thorp, J. (author), Noah, R. (author), Nguyen, B.M. (author), Bui, S. (author), Rajavel, R.D. (author), Hussain, T. (author), Gyure, M.F. (author), Kratz, P. (author), Qian, Q. (author), Manfra, M.J. (author), Pribiag, V.S. (author), Kouwenhoven, L.P. (author), Marcus, C.M. (author), Sokolich, M. (author)Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...journal article 2015