This paper describes the design of a precision bipolar junction transistor based temperature sensor implemented in standard 0.7-μmCMOS technology. It employs substrate p-n-ps as sensing elements,which makes it insensitivejournal article 2017
to the effects of mechanical (packaging) stress and facilitates the use of low-cost packaging technologies. The sensor...
Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of ±0.25 °C (±3σ) from −70 °C to 130 °CAita, AL (author), Pertijs, M.A.P. (author), Makinwa, K.A.A. (author), Huijsing, J.H. (author), Meijer, G.C.M. (author)In this paper, a low-power CMOS smart temperature sensor is presented. The temperature information extracted using substrate PNP transistors is digitized with a resolution of 0.03 °C using a precision switched-capacitor (SC) incrementaljournal article 2013
A/D converter. After batch calibration, an inaccuracy of ±0.25 °C (±3σ ) from −70 °C to 130 °C is...