Searched for:
(1 - 2 of 2)
document
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015
document
Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon, E.E.E. (author)
/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...
journal article 2018