Searched for:
(1 - 5 of 5)
document
Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon, E.E.E. (author)
/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...
journal article 2018
document
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions,...
conference paper 2015
document
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015
document
Lee, M.J. (author), Youn, J.S. (author), Park, K.Y. (author), Choi, W.Y. (author)
We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-┬Ám complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger...
journal article 2014
document
Paul, A. (author), Tettamanzi, G.C. (author), Lee, S. (author), Mehrotra, S.R. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author), Klimeck, G. (author)
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...
journal article 2011
Searched for:
(1 - 5 of 5)