A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...

A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...

Coherent Fourier Scatterometry for Detection of Killer Defects on Silicon Carbide Samples

It has been a widely growing interest in using silicon carbide (SiC) in high-power electronic devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and make the device fall into unexpected failures. To prevent these failures from happening, it is very important to develop inspection tools that can detect,...

Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics

The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit...

Three-Mode Variable-Frequency ZVS Modulation for Four-Switch Buck+Boost Converters With Ultra-high Efficiency

This article introduces a three-mode variable-frequency zero-voltage switching (ZVS) modulation method for the four-switch buck+boost converter. This method makes this circuit concept well suited for applications, such as wireless power charging of electric vehicles, where this circuit operates as a power buffer between the resonant converter...

Silicon Carbide Based Nanotubes as a Sensing Material for Gaseous H₂SiCl₂

The ability of carbon- and silicon-based nanotubes, including pure carbon, silicon carbide, and Ge-doped silicon carbide nanotubes (CNT, SiCNT, SiCGeNT, respectively), for sensing highly toxic dichlorosilane (H2SiCl2) are investigated using quantum chemistry calculations. The intermolecular interactions between the sensing material and the gas...

Design of a Fan-Out Panel-Level SiC MOSFET Power Module Using Ant Colony Optimization-Back Propagation Neural Network

A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module was developed by using the fan-out and embedded chip technologies. To achieve the more effective thermal management and higher reliability under thermal cycling, a new optimization method called Ant colony optimization-back...

Toward a Self-Sensing Piezoresistive Pressure Sensor for all-SiC Monolithic Integration

This work focusses on the design and fabrication of surface micromachined pressure sensors, designed in a modular way for the integration with analog front-end read-out electronics. Polycrystalline 3C silicon carbide (SiC) was used to fabricate free-standing high topography cavities exploiting surface micromaching. The poly-SiC was in-situ...

Improving the Back Surface Field on an Amorphous Silicon Carbide Thin Film Photocathode for Solar Water Splitting

Amorphous silicon carbide (a-SiC:H) is a promising material for photoelectrochemical water splitting owing to its relatively small band-gap energy and high chemical and optoelectrical stability. This work studies the interplay between charge-carrier separation and collection, and their injection into the electrolyte, when modifying the...