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Liles, S. D. (author), Li, R. (author), Yang, C. H. (author), Hudson, F. E. (author), Veldhorst, M. (author), Dzurak, Andrew S. (author), Hamilton, A. R. (author)
Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed...
journal article 2018
document
Ferdous, Rifat (author), Chan, Kok W. (author), Veldhorst, M. (author), Hwang, J. C.C. (author), Yang, C. H. (author), Sahasrabudhe, Harshad (author), Klimeck, Gerhard (author), Morello, Andrea (author), Dzurak, Andrew S. (author), Rahman, Rajib (author)
We identify the presence of monatomic steps at the Si/SiGe or Si/SiO2 interface as a dominant source of variations in the dephasing time of silicon (Si) quantum dot (QD) spin qubits. First, using atomistic tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our...
journal article 2018
document
Hwang, J.C.C. (author), Yang, C.H. (author), Veldhorst, M. (author), Hendrickx, N.W. (author), Fogarty, M. A. (author), Huang, W. (author), Hudson, F. E. (author), Morello, A. (author), Dzurak, A. S. (author)
We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit coupling. We fit the data from which we extract an intervalley...
journal article 2017
document
Veldhorst, M. (author), Eenink, H.G.J. (author), Yang, C.H. (author), Dzurak, A. S. (author)
Recent advances in quantum error correction codes for fault-Tolerant quantum computing and physical realizations of high-fidelity qubits in multiple platforms give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here,...
journal article 2017
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Yang, C. (author), Alves, A.D.C. (author), Van Donkelaar, J. (author), Thompson, S. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A.S. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...
journal article 2010
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Johnson, B.C. (author), Alves, A. (author), Van Donkelaar, J. (author), Thompson, S. (author), Yang, C. (author), Jamieson, D. (author), Verduijn, A. (author), Mol, J. (author), Tettamanzi, G. (author), Rogge, S. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A. (author)
journal article 2010
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