- document
-
Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotLiles, S. D. (author), Li, R. (author), Yang, C. H. (author), Hudson, F. E. (author), Veldhorst, M. (author), Dzurak, Andrew S. (author), Hamilton, A. R. (author)Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed...journal article 2018
- document
-
Hwang, J.C.C. (author), Yang, C.H. (author), Veldhorst, M. (author), Hendrickx, N.W. (author), Fogarty, M. A. (author), Huang, W. (author), Hudson, F. E. (author), Morello, A. (author), Dzurak, A. S. (author)We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit coupling. We fit the data from which we extract an intervalley...journal article 2017