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Tang, Linkai (author), He, Yan Bing (author), Wang, Chao (author), Wang, Shuan (author), Wagemaker, M. (author), Li, Baohua (author), Yang, Quan Hong (author), Kang, Feiyu (author)
Nanosized Li<sub>4</sub>Ti<sub>5</sub>O<sub>12</sub> (LTO) materials enabling high rate performance suffer from a large specific surface area and low tap density lowering the cycle life and practical energy density. Microsized LTO materials have high density which generally compromises their rate capability. Aiming at combining the favorable...
journal article 2017
document
Ma, Jiaming (author), Wei, Yinping (author), Gan, Lin (author), Wang, C. (author), Xia, Heyi (author), Lv, Wei (author), Li, Jia (author), Li, Baohua (author), Yang, Quan Hong (author), Kang, Feiyu (author), He, Yan Bing (author)
It is a huge challenge for high-tap-density electrodes to achieve high volumetric energy density but without compromising the ionic transportation. Herein, we prepared compact Li<sub>4</sub>Ti<sub>5</sub>O<sub>12</sub> (LTO) microspheres consisting of densely packed primary nanoparticles. The real space distribution of lithium ions inside the...
journal article 2019
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Liu, Jikai (author), Gaynor, Andrew T. (author), Chen, Shikui (author), Kang, Zhan (author), Suresh, Krishnan (author), Takezawa, Akihiro (author), Li, Lei (author), Kato, Junji (author), Tang, Jinyuan (author), Wang, C.C. (author), Cheng, Lin (author), Liang, Xuan (author), To, Albert. C. (author)
Manufacturing-oriented topology optimization has been extensively studied the past two decades, in particular for the conventional manufacturing methods, for example, machining and injection molding or casting. Both design and manufacturing engineers have benefited from these efforts because of the close-to-optimal and friendly-to-manufacture...
journal article 2018
document
Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Lu, Jiang (author), Tian, Xiaoli (author), Wei, Ke (author), Wu, Hao (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, G.Q. (author)
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...
review 2019
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