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Sharma, K. (author), Ponomarev, M.V. (author), Verheijen, M.A. (author), Kunz, O. (author), Tichelaar, F.D. (author), Van de Sanden, M.C.M. (author), Creatore, M. (author)
In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...
journal article 2012
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Tan, H. (author), Sivec, L. (author), Yan, B. (author), Santbergen, R. (author), Zeman, M. (author), Smets, A.H.M. (author)
We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (?c-Si:H) solar cells can be enhanced by 4.5?mA/cm2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of...
journal article 2013
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...
journal article 2010
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Kudlacek, P. (author), Van de Sanden, M.C.M. (author), Zeman, M. (author)
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...
journal article 2010
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)
Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...
journal article 2009
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Kessels, M.J.H. (author), Bijkerk, F. (author), Tichelaar, F.D. (author), Verhoeven, J. (author)
We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to...
journal article 2005
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Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)
Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...
journal article 2009
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Buchs, G. (author), Barkelid, K.M. (author), Bagiante, S. (author), Steele, G.A. (author), Zwiller, V. (author)
We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed...
journal article 2011
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Lau, G.K. (author), Goosen, J.F.L. (author), Van Keulen, F. (author), Chu Duc, T. (author), Sarro, P.M. (author)
A powerful and effective design of a polymeric thermal microactuator is presented. The design has SU-8 epoxy layers filled and bonded in a meandering silicon (Si) microstructure. The silicon microstructure reinforces the SU-8 layers by lateral restraint. It also improves the transverse thermal expansion coefficient and heat transfer for the...
journal article 2007
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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)
Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....
journal article 2009
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Shastin, V.N. (author), Zhukavin, R.K. (author), Orlova, E.E. (author), Pavlov, S.G. (author), Rümmeli, M.H. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Riemann, H. (author), Bradley, I.V. (author), Van der Meer, A.F.G. (author)
Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude...
journal article 2002
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Oliviero, E. (author), David, M.L. (author), Beaufort, M.F. (author), Barbot, J.F. (author), Van Veen, A. (author)
He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation...
journal article 2002
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Pavlov, S.G. (author), Hübers, H.W. (author), Böttger, U. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Hovenier, J.N. (author), Redlich, B. (author), Abrosimov, N.V. (author), Riemann, H. (author)
Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are...
journal article 2008
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Mueller, F. (author), Schouten, R.N. (author), Brauns, M. (author), Gang, T. (author), Lim, W.H. (author), Lai, N.S. (author), Dzurak, A.S. (author), Van der Wiel, W.G. (author), Zwanenburg, F.A. (author)
We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz–20 GHz) of filter made of four metal powders with a...
journal article 2013
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Khan, R.U.A. (author), Silva, S.R.P. (author), Van Swaaij, R.A.C.M.M. (author)
Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in...
journal article 2003
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Krc, J. (author), Zeman, M. (author), Luxembourg, S.L. (author), Topic, M. (author)
A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...
journal article 2009
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)
We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...
journal article 2008
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Isabella, O. (author), Kr?, J. (author), Zeman, M. (author)
Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....
journal article 2010
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Lazic, I. (author), Ikonic, Z. (author), Milanovic, V. (author), Kelsall, R.W. (author), Indjin, D. (author), Harrison, P. (author)
An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization....
journal article 2007
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Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)
In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...
journal article 2010
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