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van der Walle, P (author), Kramer, E. (author), van der Donck, J.C.J. (author), Mulckhuyse, W (author), Nijsten, L. (author), Bernal Arango, F.A. (author), de Jong, A. (author), van Zeijl, E. (author), Spruit, H. E.T. (author), van den Berg, J.H. (author), Nanda, G. (author), van Langen-Suurling, A.K. (author), Alkemade, P.F.A. (author), Pereira, S.F. (author), Maas, D.J. (author)
Particle defects are important contributors to yield loss in semi-conductor manufacturing. Particles need to be detected and characterized in order to determine and eliminate their root cause. We have conceived a process flow for advanced defect classification (ADC) that distinguishes three consecutive steps; detection, review and...
conference paper 2017
document
Nanda, G. (author), Veldhoven, E. van (author), Maas, D. (author), Herfst, R. (author), Sadeghian Marnani, H. (author), Alkemade, P.F.A. (author)
abstract 2016
document
Bouwens, MAJ (author), Maas, D (author), van der Donck, JCJ (author), Alkemade, P.F.A. (author), van der Walle, P (author)
To qualify tools of semiconductor manufacturing, particles unintentionally deposited in these tools are character-ized using blank wafers. With fast optical inspection tools one can quickly localize these particle defects. An ex-ample is TNO's Rapid Nano, which operates in optical darkfield. The next step is defect review for further...
journal article 2016
document
Nanda, G. (author), Van Veldhoven, E. (author), Maas, D. (author), Sadeghian, H. (author), Alkemade, P.F.A. (author)
The authors report the direct-write growth of hammerhead atomic force microscope(AFM) probes by He+beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+beam during exposure to a PtC precursor gas. In the final growth stage, a perpendicular movement of the...
journal article 2015
document
Alkemade, P.F.A. (author), Miro, H. (author), Van Veldhoven, E. (author), Maas, D.J. (author), Smith, D.A. (author), Rack, P.D. (author)
The sub-nanometer beam of a helium ion microscope was used to study and optimize helium-ion beam induced deposition of PtC nanopillars with the (CH3)3Pt(CPCH3) precursor. The beam current, beam dwell time, precursor refresh time, and beam focus have been independently varied. Continuous beam exposure resulted in narrow but short pillars, while...
journal article 2011
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Maas, D. (author), Van veldhoven, E. (author), Chen, P. (author), Sidorkin, V. (author), Salemink, H. (author), Van der Drift, E. (author), Alkemade, P. (author)
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostructures thanks to its sub-nanometer sized ion probe [1,2]. The unique interaction of the helium ions with the sample material provides very localized secondary electron emission, thus providing a valuable signal for high-resolution imaging as well...
conference paper 2010
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Alkemade, P.F.A. (author), Chen, P. (author), Van Veldhoven, E. (author), Maas, D. (author)
An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This model describes the competition between pillar growth in vertical and lateral directions. It assumes that vertical growth is induced by incident primary ions and type-1 secondary electrons, whereas lateral...
journal article 2010
document
Chen, P. (author), Van Veldhoven, E. (author), Sanford, C.A. (author), Salemink, H.W.M. (author), Maas, D.J. (author), Smith, D.A. (author), Rack, P.D. (author), Alkemade, P.F.A. (author)
A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3)3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars...
journal article 2010
document
Van Veldhoven, E. (author), Sidorkin, V. (author), Chen, P. (author), Alkemade, P. (author), Van der Drift, E. (author), Salemink, H. (author), Zandbergen, H. (author), Maas, D. (author)
journal article 2010
document
Sanford, C.A. (author), Stern, L. (author), Barriss, L. (author), Farkas, L. (author), DiManna, M. (author), Mello, R. (author), Maas, D.J. (author), Alkemade, P.F.A. (author)
Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium’s electrical properties and sample interaction characteristics relative to gallium, it is likely that the properties and deposition...
journal article 2009
document
Sidorkin, V. (author), Van Veldhoven, E. (author), Van der Drift, E.W.J.M. (author), Alkemade, P.F.A. (author), Salemink, H. (author), Maas, D. (author)
Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.
journal article 2009
document
Maas, D. (author), Van Veldhoven, E. (author), Chen, P. (author), Sidorkin, V. (author), Salemink, H. (author), Van der Drift, E. (author), Alkemade, P. (author)
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostructures thanks to its sub-nanometer sized ion probe [1,2]. The unique interaction of the helium ions with the sample material provides very localized secondary electron emission, thus providing a valuable signal for high-resolution imaging as well...
conference paper 2009
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