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Chen, P. (author), Van Veldhoven, E. (author), Sanford, C.A. (author), Salemink, H.W.M. (author), Maas, D.J. (author), Smith, D.A. (author), Rack, P.D. (author), Alkemade, P.F.A. (author)
A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3)3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars...
journal article 2010