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van Berkel, S.L. (author), Malotaux, E.S. (author), Cavallo, D. (author), Spirito, M. (author), Neto, A. (author), Llombart Juan, N. (author)
The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the antenna-detector impedance mismatch, the detector shows an average NEP...
conference paper 2017
document
Didden, A. (author), Battjes, H. (author), Machunze, R. (author), Dam, B. (author), Van de Krol, R. (author)
In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and...
journal article 2011
document
Popadic, M. (author)
Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping profiles by low-temperature Si epitaxy is a...
doctoral thesis 2009
document
Popadic, M. (author), Lorito, G. (author), Nanver, L.K. (author)
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode...
journal article 2008
document
Molinari, A.S. (author), Gutiérrez Lezama, I. (author), Parisse, P. (author), Takenobu, T. (author), Iwasa, Y. (author), Morpurgo, A.F. (author)
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be quantitatively reproduced in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias...
journal article 2008
document
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...
journal article 2002
document
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...
journal article 2002
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