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Chen, Wei (author), Jiang, Jing (author), Meda, Abdulmelik H. (author), Ibrahim, Mesfin S. (author), Zhang, Kouchi (author), Fan, J. (author)
SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...
journal article 2023
document
Cui, Z. (author), Chen, Xianping (author), Fan, Xuejun (author), Zhang, Kouchi (author)
Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In...
conference paper 2018
document
Cui, Z. (author), Zhang, Yingying (author), Yang, Qun (author), Zhang, Kouchi (author), Chen, Xianping (author)
Interfacial properties of Cu/SiO<sub>2</sub> in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO<sub>2</sub>. The...
conference paper 2018