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Chiba, T. (author), Bauer, G.E.W. (author), Takahashi, S. (author)
We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and...
journal article 2013
document
Bandopadyay, S. (author), Brataas, A. (author), Bauer, G.E.W. (author)
The miniaturization of magnetic read heads and random access memory elements makes them vulnerable to thermal fluctuations. We demonstrate how current-induced spin-transfer torques can be used to suppress the effects of thermal fluctuations. This enhances the fidelity of perpendicular magnetic spin valves. The simplest realization is a dc to...
journal article 2011
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Manschot, J. (author), Brataas, A. (author), Bauer, G.E.W. (author)
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memories. We show that the critical switching current can be decreased by an order of magnitude by strategically distributing the resistances in the magnetically active region of the spin valve. In addition, we...
journal article 2004
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Bauer, G.E.W. (author), Brataas, A. (author), Tserkovnyak, Y. (author), Van Wees, B.J. (author)
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin valve. The device can operate at room...
journal article 2003
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