Searched for:
(1 - 7 of 7)
document
Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon, E.E.E. (author)
We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...
journal article 2018
document
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015
document
Burri, S. (author), Maruyama, Y. (author), Michalet, X. (author), Regazzoni, F. (author), Bruschini, C. (author), Charbon, E. (author)
We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....
journal article 2014
document
Mata Pavia, J. (author), Wolf, M. (author), Charbon, E. (author)
Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel’s surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanche diode (SPAD) imager to enhance its sensitivity. The benefit and limitations of these...
journal article 2014
document
Li, D.D.U. (author), Arlt, J. (author), Tyndall, D. (author), Walker, R. (author), Richardson, J. (author), Stoppa, D. (author), Charbon, E. (author), Henderson, R.K. (author)
A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 ?m complementary metaloxide-semiconductor single-photon...
journal article 2011
document
Rosticher, M. (author), Ladan, F.R. (author), Maneval, J.P. (author), Dorenbos, S.N. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Lupa?cu, A. (author), Nogues, G. (author)
We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an...
journal article 2010
document
Li, D.U. (author), Arlt, J. (author), Richardson, J. (author), Walker, R. (author), Buts, A. (author), Stoppa, D. (author), Charbon, E. (author), Henderson, R. (author)
A compact real-time fluorescence lifetime imaging microscopy (FLIM) system based on an array of low dark count 0.13?m CMOS singlephoton avalanche diodes (SPADs) is demonstrated. Fast background-insensitive fluorescence lifetime determination is achieved by use of a recently proposed algorithm called ‘Integration for Extraction Method’ (IEM) [J....
journal article 2010
Searched for:
(1 - 7 of 7)