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Tiwari, R.P. (author), Blaauboer, M. (author)
We consider quantum pumping of Dirac fermions in a monolayer of graphene in the presence of a perpendicular magnetic field in the central pumping region. The two external pump parameters are electrical voltages applied to the graphene sheet on either side of the pumping region. We analyze this pump within scattering matrix formalism and...
journal article 2010
document
Schapotschnikow, P. (author), Vlugt, T.J.H. (author)
Self-assembly of capped nanocrystals (NC) attracted a lot of attention over the past decade. Despite progress in manufacturing of NC superstructures, the current understanding of their mechanical and thermodynamic stability is still limited. For further applications, it is crucial to find the origin and the magnitude of the interactions that...
journal article 2009
document
Perinetti, U. (author), Akopian, N. (author), Samsonenko, Y.B. (author), Bouravleuv, A.D. (author), Cirlin, G.E. (author), Zwiller, V. (author)
We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime...
journal article 2009
document
Hrauda, N. (author), Zhang, J.J. (author), Stangl, J. (author), Rehman-Khan, A. (author), Bauer, G. (author), Stoffel, M. (author), Schmidt, O.G. (author), Jovanovich, V. (author), Nanver, L.K. (author)
In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...
journal article 2009
document
Christova, C.G. (author), Stouwdam, J.W. (author), Eijkemans, T.J. (author), Silov, A.Y. (author), Van der Heijden, R.W. (author), Kemerink, M. (author), Janssen, R.A.J. (author), Salemink, H.W.M. (author)
Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2 substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation...
journal article 2008
document
Ter Horst, J.H. (author), Kashchiev, D. (author)
A new method is proposed for the determination of the stationary one-component nucleation rate J with the help of data for the growth probability P2 of a dimer which is the smallest cluster of the nucleating phase. The method is based on an exact formula relating J and P2, and is readily applicable to computer simulations of nucleation. Using...
journal article 2005
document
Tans, S.J. (author), Geerligs, L.J. (author), Dekker, C. (author), Wu, J. (author), Wegner, G. (author)
journal article 1997
document
Dekker, C. (author), Tans, S.J. (author), Geerligs, L.J. (author), Bezryadin, A. (author), Wu, J. (author), Wegner, G. (author)
journal article 1997
document
Tans, S.J. (author), Miedema, R. (author), Geerligs, L.J. (author), Dekker, C. (author), Wu, J. (author), Wegner, G. (author)
journal article 1997
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