Searched for:
(1 - 20 of 27)

Pages

document
Yi, W. (author), Kiselev, A.A. (author), Thorp, J. (author), Noah, R. (author), Nguyen, B.M. (author), Bui, S. (author), Rajavel, R.D. (author), Hussain, T. (author), Gyure, M.F. (author), Kratz, P. (author), Qian, Q. (author), Manfra, M.J. (author), Pribiag, V.S. (author), Kouwenhoven, L.P. (author), Marcus, C.M. (author), Sokolich, M. (author)
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...
journal article 2015
document
Hayton, D.J. (author), Khudchenko, A. (author), Pavelyev, D.G. (author), Hovenier, J.N. (author), Baryshev, A. (author), Gao, J.R. (author), Kao, T.Y. (author), Hu, Q. (author), Reno, J.L. (author), Vaks, V. (author)
We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60?dB is observed in the intermediate frequency signal between the 18th harmonic of a 190.7?GHz...
journal article 2013
document
Cui, M. (author), Hovenier, J.N. (author), Ren, Y. (author), Vercruyssen, N. (author), Gao, J.R. (author), Kao, T.Y. (author), Hu, Q. (author), Reno, J.L. (author)
We report on both measurements and simulations of the beam profile and wavefront of a single-mode, 3.5?THz quantum cascade wire laser, incorporating a lateral corrugated metal-metal waveguide, 3rd-order distributed feedback grating. The intrinsic wavefront was measured by using a Hartmann wavefront sensor (HWS) without any optical components...
journal article 2013
document
Braakman, F.R. (author), Barthelemy, P. (author), Reichl, C. (author), Wegscheider, W. (author), Vandersypen, L.M.K. (author)
We report both photon- and phonon-assisted tunneling transitions in a linear array of three quantum dots, which can only be understood by considering the full three-dimensionality of the charge stability diagram. Such tunneling transitions potentially contribute to leakage of qubits defined in this system. A detailed understanding of these...
journal article 2013
document
Bugarini, G. (author), Reimer, M.E. (author), Zwiller, V. (author)
We report on the optical properties of single quantum dots in nanowires probed along orthogonal directions. We address the same quantum dot from either the nanowire side or along the nanowire axis via reflection on a micro-prism. The collected photoluminescence intensity from nanowires lying on a substrate is improved 3-fold using the prism as...
journal article 2012
document
Bulgarini, G. (author), Reimer, M.E. (author), Zehender, T. (author), Hocevar, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire...
journal article 2012
document
Diedenhofen, S.L. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Gómez Rivas, J. (author)
The propagation of light in layers of vertically aligned nanowires is determined by their unique and extreme optical properties. Depending on the nanowire filling fraction and their diameter, layers of nanowires form strongly birefringent media. This large birefringence gives rise to sharp angle dependent peaks in polarized reflection. We...
journal article 2011
document
Schins, J.M. (author)
The retrieval of the primary (subpicosecond) photoproducts in small-band two-dimensional time-domain terahertz spectroscopy has succeeded only in a few model systems, due to the complicated correlation between the two time parameters. We show that the nature of the primary photoproducts is revealed upon differentiating the measured time-domain...
journal article 2010
document
Dorenbos, S.N. (author), Sasakura, H. (author), Van Kouwen, M.P. (author), Akopian, N. (author), Adachi, S. (author), Namekata, N. (author), Jo, M. (author), Motohisa, J. (author), Kobayashi, Y. (author), Tomioka, K. (author), Fukui, T. (author), Inoue, S. (author), Kumano, H. (author), Natarajan, C.M. (author), Hadfield, R.H. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Suemune, I. (author)
We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum...
journal article 2010
document
Van Kouwen, M.P. (author), Van Weert, M.H.M. (author), Reimer, M.E. (author), Akopian, N. (author), Perinetti, U. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light...
journal article 2010
document
Akopian, N. (author), Perinetti, U. (author), Wang, L. (author), Rastelli, A. (author), Schmidt, O.G. (author), Zwiller, V. (author)
We study single GaAs quantum dots with optical transitions that can be brought into resonance with the widely used D2 transitions of rubidium atoms. We achieve resonance by Zeeman or Stark shifting the quantum dot levels. We discuss an energy stabilization scheme based on the absorption of quantum dot photoluminescence in a rubidium vapor. This...
journal article 2010
document
Van Weert, M.H.M. (author), Den Heijer, M. (author), Van Kouwen, M.P. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis,...
journal article 2010
document
Scheffler, M. (author), Nadj-Perge, S. (author), Kouwenhoven, L.P. (author), Borgström, M.T. (author), Bakkers, E.P.A.M. (author)
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within...
journal article 2009
document
Kicken, H.H.J.E. (author), Barbu, I. (author), Van der Heijden, R.W. (author), Karouta, F. (author), Nötzel, R. (author), Van der Drift, E. (author), Salemink, H.W.M. (author)
The photonic properties of two classes of wavelength-sized cavities are reported for deeply etched InP/InGaAsP/InP planar photonic crystals. The high aspect, deeply etched structures are studied as potential building blocks for nonmembrane type photonic devices in standard InP photonic integrated circuits. The first class consists of cavities of...
journal article 2009
document
Perinetti, U. (author), Akopian, N. (author), Samsonenko, Y.B. (author), Bouravleuv, A.D. (author), Cirlin, G.E. (author), Zwiller, V. (author)
We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime...
journal article 2009
document
Carlström, C.F. (author), Van der Heijden, R. (author), Andriesse, M.S.P. (author), Karouta, F. (author), Van der Heijden, R.W. (author), Van der Drift, E.W.J.M. (author), Salemink, H.W.M. (author)
An extensive investigation has been performed on inductively coupled plasma etching of InP. An important motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals. The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. The influence of different process parameters such...
journal article 2008
document
Caro, J. (author), Roeling, E.M. (author), Rong, B. (author), Nguyen, H.M. (author), Van der Drift, E.W.J.M. (author), Rogge, S. (author), Karouta, F. (author), Van der Heijden, R.W. (author), Salemink, H.W.M. (author)
A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time domain simulations gives quantitative agreement...
journal article 2008
document
Ghatak, K.P. (author), Bhattacharya, S. (author), Bhowmik, S. (author), Benedictus, R. (author), Choudhury, S. (author)
We study the Einstein relation for the diffusivity to mobility ratio (DMR) in quantum wires (QWs) of III-V, ternary, and quaternary materials in the presence of light waves, whose unperturbed energy band structures are defined by the three band model of Kane. It has been found, taking n-InAs, n-InSb, n-Hg1?xCdxTe, n-In1?xGaxAsyP1?y lattice...
journal article 2008
document
Ghatak, K.P. (author), Bhattacharya, S. (author), Bhowmik, S. (author), Benedictus, R. (author), Choudhury, S. (author)
We study thermoelectric power under strong magnetic field (TPM) in carbon nanotubes (CNTs) and quantum wires (QWs) of nonlinear optical, optoelectronic, and related materials. The corresponding results for QWs of III-V, ternary, and quaternary compounds form a special case of our generalized analysis. The TPM has also been investigated in QWs of...
journal article 2008
document
Dorenbos, P. (author), Van der Kolk, E. (author)
Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...
journal article 2006
Searched for:
(1 - 20 of 27)

Pages