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Civale, Y. (author), Vastola, G. (author), Nanver, L.K. (author), Mary-Joy, R. (author), Kim, J.R. (author)
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of ...
journal article 2009