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Cook, B.J. (author), Kruit, P. (author)
Photofield emitters show great potential for many single electron pulsed applications. However, for the brightest pulses > 10 11 A / (m 2 sr V), our simulations show that Poisson statistics and stochastic Coulomb interactions limit the brightness and increase the energy spread even with an average of a single electron per pulse. For the...
journal article 2016
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Popadic, M. (author), Lorito, G. (author), Nanver, L.K. (author)
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode...
journal article 2008
document
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...
journal article 2002
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...
journal article 2002
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