Searched for: +
(1 - 2 of 2)
document
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...
journal article 2020
document
Sokolovskij, R. (author), Iervolino, E. (author), Zhao, Changhui (author), Wang, F. (author), Yu, Hongyu (author), Santagata, F. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W<sub>g</sub>/L<sub>g</sub> from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient...
conference paper 2017