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Wang, Chuan (author), Sun, Renjuan (author), Hu, Xinlei (author), Guan, Yanhua (author), Yang, Yingzi (author), Lu, Wei (author), Tian, Jun (author), Zhang, Hongzhi (author), Ge, Zhi (author), Šavija, B. (author)
This paper presents a research on the chloride penetration behavior of engineered cementitious composites (ECC) under sustained flexural loads. Three load levels, i.e. 30 %, 60 % and 75 % of the ultimate flexural load were used. Chloride diffusion depth and concentration profile were measured 30, 60 and 150 days after the specimen was exposed...
journal article 2023
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Xu, H. (author), Tian, Zhan (author), Sun, Laixiang (author), Ye, Qinghua (author), Ragno, E. (author), Bricker, J.D. (author), Tan, Jinkai (author), Ke, Q. (author), Wang, Shuai (author)
Compound flooding is generated when two or more flood drivers occur simultaneously or in close succession. Multiple drivers can amplify each other and lead to greater impacts than when they occur in isolation. A better understanding of the interdependence between flood drivers would facilitate a more accurate assessment of compound flood risk...
journal article 2022
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Wang, Shuai (author), Toumi, Ralf (author), Ye, Qinghua (author), Ke, Q. (author), Bricker, J.D. (author), Tian, Zhan (author), Sun, Laixiang (author)
It has been shown that the proportion of intense tropical cyclones (TCs) has been increasing together with a poleward migration of TC track. However, their relative importance to TC surge at landfall remains unknown. Here we examine the sensitivity of TC surge in Shanghai to landfall location and intensity with a new dynamical modelling...
journal article 2021
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Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Lu, Jiang (author), Tian, Xiaoli (author), Wei, Ke (author), Wu, Hao (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...
review 2019
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