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Rajaraman, V. (author), Pakula, L.S. (author), Yang, H. (author), French, P.J. (author), Sarro, P.M. (author)
Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a...
journal article 2011