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document
Hofhuis, J. (author), Schoonman, J. (author), Goossens, A. (author)
Time-of-Flight (TOF) measurements have been performed on n-type TiO2/p-type CuInS2 heterojunctions. The TiO2 film thickness has been varied between 200 and 400 nm, while the CuInS2 film thickness has been fixed at 500 nm. The TOF response can be accurately modeled, if the potential drop across the p-n heterojunction with a large density of...
journal article 2008
document
Loef, R. (author), Schoonman, J. (author), Goossens, A. (author)
Type transformation in CuInSe2 and CuInS2 solar cells is an important issue with far reaching consequences. In the present study, the presence of a p-n homojunction inside CuInS2 in a TiO2/CuInS2 device is revealed with a detailed impedance spectroscopy and capacitance study. A n-type CuInS2 film with a thickness of 40?nm is found at the TiO2 (n...
journal article 2007
document
Savenije, T.J. (author), Nanu, M. (author), Schoonman, J. (author), Goossens, A. (author)
Photoinduced interfacial charge carrier generation, separation, trapping, and recombination in TiO2?In2S3?CuInS2 cells have been studied with time-resolved microwave conductivity (TRMC). Single layer, double layer, and complete triple layer configurations have been studied. Selective electronic excitation in one of the components is accomplished...
journal article 2007
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O'Hayre, R. (author), Nanu, M. (author), Schoonman, J. (author), Goossens, A. (author)
journal article 2007
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Nanu, M. (author), Boulch, F. (author), Schoonman, J. (author), Goossens, A. (author)
Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to antisite point defects and vacancies....
journal article 2005
document
Van der Zanden, B. (author), Van de Krol, R. (author), Schoonman, J. (author), Goossens, A. (author)
The photoluminescence (PL) of poly(3-octyl-thiophene) (P3OT) thin films applied on TiO2 substrates is compared to the PL of P3OT films applied on quartz. Quenching of excitons occurs at the P3OT/TiO2 interface and not at the P3OT/quartz interface. Yet, in the former case the PL intensity is stronger than in the latter. In particular, P3OT films...
journal article 2004
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Van de Krol, R. (author), Goossens, A. (author), Schoonman, J. (author)
journal article 1997
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Boschloo, G.K. (author), Goossens, A. (author), Schoonman, J. (author)
journal article 1997
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Goossens, A. (author), Schoonman, J. (author)
journal article 1997
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Boschloo, G.K. (author), Goossens, A. (author), Schoonman, J. (author)
journal article 1997
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Schroten, E. (author), Goossens, A. (author), Schoonman, J. (author)
journal article 1996
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Goossens, A. (author), Schoonman, J. (author), Yoshimura, M. (author)
journal article 1995
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Goossens, A. (author), Schoonman, J. (author)
journal article 1995
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Goossens, A. (author), Schoonman, J. (author)
journal article 1992
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Goossens, A. (author), Kelder, E.M. (author), Beeren, R.J.M. (author), Bartels, C.J.G. (author), Schoonman, J. (author)
journal article 1991
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Goossens, A. (author), Schoonman, J. (author)
journal article 1990
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Goossens, A. (author), Kelder, E.M. (author), Schoonman, J. (author)
journal article 1989
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