A 155W −95.6 dB THD+N GaN-based Class-D Audio Amplifier With LC Filter Nonlinearity Compensation

Silicon MOSFETs-based medium-power (< 50W) Class-D amplifiers (CDAs) switching in the MHz range have gained popularity in recent years, which achieves better linearity thanks to a higher loop gain in the audio band while enabling the use of LC filters with higher cut-off frequencies. However, for high-power (>100 W) CDAs, such switching...

Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON...

Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...

Suspended AlGaN/GaN HEMT NO₂ Gas Sensor Integrated with Micro-heater

We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO₃) nano-film modified gate for nitrogen dioxide (NO₂) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...

Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...

Mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios...

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W_g/L_g from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient...