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Sokolovskij, R. (author), Zhang, Jian (author), Iervolino, E. (author), Zhao, Changhui (author), Santagata, F. (author), Wang, F. (author), Yu, Hongyu (author), Sarro, P.M. (author), Zhang, G.Q. (author)
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H<sub>2</sub>S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...
journal article 2018
document
Sokolovskij, R. (author), Iervolino, E. (author), Zhao, Changhui (author), Wang, F. (author), Yu, Hongyu (author), Santagata, F. (author), Sarro, P.M. (author), Zhang, G.Q. (author)
This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W<sub>g</sub>/L<sub>g</sub> from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient...
conference paper 2017