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Zhukavin, R.K. (author), Shastin, V.N. (author), Pavlov, S.G. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Van der Meer, A.F.G. (author)
Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the...
journal article 2007
document
Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)
Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...
journal article 2009