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Onink, M. (author), Brakman, C.M. (author), Root, J.H. (author), Tichelaar, F.D. (author), Mittemeijer, E.J. (author), Van der Zwaag, S. (author)
conference paper 1994
document
Onink, M. (author), Tichelaar, F.D. (author), Mittemeijer, E.J. (author), Van der Zwaag, S. (author)
conference paper 1995
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Tichelaar, F.D. (author)
doctoral thesis 1990
document
Tichelaar, G.W. (author)
doctoral thesis 1956
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Onink, M. (author), Tichelaar, F.D. (author), Brakman, C.M. (author), Mittemeijer, E.J. (author), Van der Zwaag, S. (author)
journal article 1995
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Zhang, S. (author), Kwakernaak, C. (author), Tichelaar, F.D. (author), Sloof, W.G. (author), Kuzmina, M. (author), Herbig, M. (author), Raabe, D. (author), Brück, E. (author), Van der Zwaag, S. (author), Van Dijk, N.H. (author)
The autonomous repair mechanism of creep cavitation during high-temperature deformation has been investigated in Fe-Au and Fe-Au-B-N alloys. Combined electron-microscopy techniques and atom probe tomography reveal how the improved creep properties result from Au precipitation within the creep cavities, preferentially formed on grain boundaries...
journal article 2015
document
Janssen, G.C.A.M. (author), Tichelaar, F.D. (author), Visser, C.C.G. (author)
Stress in hard films is the net sum of tensile stress generated at the grain boundaries, compressive stress due to ion peening, and thermal stress due to the difference in thermal expansion of the coating and substrate. The tensile part due to grain boundaries is thickness dependent. The other two contributions are not thickness dependent....
journal article 2006
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Onink, M. (author), Brakman, C.M. (author), Tichelaar, F.D. (author), Mittemeijer, E.J. (author), Van der Zwaag, S. (author), Root, J.H. (author), Konyer, N.B. (author)
journal article 1993
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Fang, H. (author), Szymanski, N. (author), Versteylen, C. D. (author), Cloetens, P. (author), Kwakernaak, C. (author), Sloof, W.G. (author), Tichelaar, F.D. (author), Balachandran, S. (author), Herbig, M. (author), Brück, E.H. (author), van der Zwaag, S. (author), van Dijk, N.H. (author)
When metals are mechanically loaded at elevated temperatures for extended periods of time, creep damage will occur in the form of cavities at grain boundaries. In the present experiments it is demonstrated that in binary iron-tungsten alloys creep damage can be self healed by selective precipitation of a W-rich phase inside these cavities. Using...
journal article 2019
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Liu, C. (author), Malladi, S.R.K. (author), Xu, Q. (author), Chen, Jianghua (author), Tichelaar, F.D. (author), Zhuge, Xiaodong (author), Zandbergen, H.W. (author)
Age-hardening in Al alloys has been used for over a century to improve its mechanical properties. However, the lack of direct observation limits our understanding of the dynamic nature of the evolution of nanoprecipitates during age-hardening. Using in-situ (scanning) transmission electron microscopy (S/TEM) while heating an Al-Cu alloy, we...
journal article 2017
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Cheynet, M.C. (author), Pokrant, S. (author), Tichelaar, F.D. (author), Rouvière, J.L. (author)
Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by low-loss EELS analysis. The Eg values are then...
journal article 2007
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Kessels, M.J.H. (author), Bijkerk, F. (author), Tichelaar, F.D. (author), Verhoeven, J. (author)
We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to...
journal article 2005
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Kim, T.K. (author), Wells, J. (author), Kirkegaard, C. (author), Li, Z. (author), Hoffmann, S.V. (author), Gayone, J.E. (author), Fernandez-Torrente, I. (author), Häberle, P. (author), Pascual, J.I. (author), Moore, K.T. (author), Schwartz, A.J. (author), He, H. (author), Spence, J.C.H. (author), Downing, K.H. (author), Lazar, S. (author), Tichelaar, F.D. (author), Borisenko, S.V. (author), Knupfer, M. (author), Hofmann, Ph. (author)
journal article 2005
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Zijlstra, T. (author), Lodewijk, C.F.J. (author), Vercruyssen, N. (author), Tichelaar, F.D. (author), Loudkov, D.N. (author), Klapwijk, T.M. (author)
High critical current-density (10?to?420?kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10?3–10?1?mbar. We find a much better reproducibility and control compared to previous...
journal article 2007
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Yalcin, A.O. (author), Fan, Z. (author), Goris, B. (author), Li, W.F. (author), Koster, R.S. (author), Fang, C.M. (author), Van Blaaderen, A. (author), Casavola, M. (author), Tichelaar, F.D. (author), Bals, S. (author), Van Tendeloo, G. (author), Vlugt, T.J.H. (author), Vanmaekelbergh, D. (author), Zandbergen, H.W. (author), Van Huis, M.A. (author)
Here, we show a novel solid?solid?vapor (SSV) growth mechanism whereby epitaxial growth of heterogeneous semiconductor nanowires takes place by evaporation-induced cation exchange. During heating of PbSe-CdSe nanodumbbells inside a transmission electron microscope (TEM), we observed that PbSe nanocrystals grew epitaxially at the expense of CdSe...
journal article 2014
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Jeurgens, L.P.H. (author), Sloof, W.G. (author), Tichelaar, F.D. (author), Mittemeijer, E.J. (author)
journal article 2000
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Cartamil Bueno, S.J. (author), Steeneken, P.G. (author), Tichelaar, F.D. (author), Navarro Moratalla, E. (author), Venstra, W.J. (author), Leeuwen, R. (author), Coronado, E. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author), Castellanos-Gomez, A. (author)
Controlling the strain in two-dimensional (2D) materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here, we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by the laser oxidation of nano-drumhead resonators composed of tantalum...
journal article 2015
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Mele, L. (author), Santagata, F. (author), Panraud, G. (author), Morana, B. (author), Tichelaar, F.D. (author), Creemer, J.F. (author), Sarro, P.M. (author)
This paper presents a new process for the fabrication of MEMS-based nanoreactors for in situ atomic-scale imaging of nanoparticles under relevant industrial conditions. The fabrication of the device is completed fully at wafer level in an ISO 5 clean room and it is based on silicon fusion bonding and thin film encapsulation for sealed lateral...
journal article 2010
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Wellock, K. (author), Theeuwen, S.J.C.H. (author), Caro, J. (author), Gribov, N.N. (author), Van Gorkom, R.P. (author), Radelaar, S. (author), Tichelaar, F.D. (author), Hickey, B.J. (author), Marrows, C.H. (author)
journal article 1999
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Sharma, K. (author), Ponomarev, M.V. (author), Verheijen, M.A. (author), Kunz, O. (author), Tichelaar, F.D. (author), Van de Sanden, M.C.M. (author), Creatore, M. (author)
In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...
journal article 2012
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