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Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)
In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...
journal article 2010
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)
Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...
journal article 2009
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Lau, G.K. (author), Goosen, J.F.L. (author), Van Keulen, F. (author), Chu Duc, T. (author), Sarro, P.M. (author)
A powerful and effective design of a polymeric thermal microactuator is presented. The design has SU-8 epoxy layers filled and bonded in a meandering silicon (Si) microstructure. The silicon microstructure reinforces the SU-8 layers by lateral restraint. It also improves the transverse thermal expansion coefficient and heat transfer for the...
journal article 2007
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Mueller, F. (author), Schouten, R.N. (author), Brauns, M. (author), Gang, T. (author), Lim, W.H. (author), Lai, N.S. (author), Dzurak, A.S. (author), Van der Wiel, W.G. (author), Zwanenburg, F.A. (author)
We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz–20 GHz) of filter made of four metal powders with a...
journal article 2013
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)
We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...
journal article 2008
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Erdamar, A.K. (author), Van Leest, M.M. (author), Picken, S.J. (author), Caro, J. (author)
We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type silicon photonic crystal slab and global thermal...
journal article 2011
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Lazic, I. (author), Ikonic, Z. (author), Milanovic, V. (author), Kelsall, R.W. (author), Indjin, D. (author), Harrison, P. (author)
An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization....
journal article 2007
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Isabella, O. (author), Kr?, J. (author), Zeman, M. (author)
Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....
journal article 2010
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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)
Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....
journal article 2009
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Shastin, V.N. (author), Zhukavin, R.K. (author), Orlova, E.E. (author), Pavlov, S.G. (author), Rümmeli, M.H. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Riemann, H. (author), Bradley, I.V. (author), Van der Meer, A.F.G. (author)
Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude...
journal article 2002
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Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)
We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...
journal article 2009
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...
journal article 2009
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Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)
We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...
journal article 2011
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Heremans, F.J. (author), Fuchs, G.D. (author), Wang, C.F. (author), Hanson, R. (author), Awschalom, D.D. (author)
We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ? 3?hours. By measuring the photoexcited Hall effect, we confirm that the charge...
journal article 2009
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Pavlov, S.G. (author), Hübers, H.W. (author), Böttger, U. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Hovenier, J.N. (author), Redlich, B. (author), Abrosimov, N.V. (author), Riemann, H. (author)
Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are...
journal article 2008
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Oliviero, E. (author), David, M.L. (author), Beaufort, M.F. (author), Barbot, J.F. (author), Van Veen, A. (author)
He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation...
journal article 2002
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Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)
Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...
journal article 2009
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Kessels, M.J.H. (author), Bijkerk, F. (author), Tichelaar, F.D. (author), Verhoeven, J. (author)
We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to...
journal article 2005
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Civale, Y. (author), Nanver, L.K. (author), Alberici, S.G. (author), Gammon, A. (author), Kelly, I. (author)
A procedure has been implemented for a quantitative aluminum-doping profiling of µm-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1–2×1019 cm?3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was...
journal article 2008
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Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Biesemans, S. (author)
The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors by low-temperature transport experiments. These three-dimensional nanoscale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers down to 50×60×35?nm3....
journal article 2007
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