Searched for: +
(1 - 1 of 1)
document
Ferdous, Rifat (author), Chan, Kok W. (author), Veldhorst, M. (author), Hwang, J. C.C. (author), Yang, C. H. (author), Sahasrabudhe, Harshad (author), Klimeck, Gerhard (author), Morello, Andrea (author), Dzurak, Andrew S. (author), Rahman, Rajib (author)
We identify the presence of monatomic steps at the Si/SiGe or Si/SiO2 interface as a dominant source of variations in the dephasing time of silicon (Si) quantum dot (QD) spin qubits. First, using atomistic tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our...
journal article 2018