Persistent luminescence in MSi2O2N2:Eu phosphors

In this work we study the persistent luminescence properties of europium-doped alkaline earth silicon oxynitrides (CaSi2O2N2, SrSi2O2N2 and BaSi2O2N2). All compounds show afterglow emission, with an emission spectrum which is similar to the steady state photoluminescence. The afterglow decay time for BaSi2O2N2:Eu and SrSi2O2N2:Eu is about 50 and...

Ultraviolet-vacuum ultraviolet photoluminescence and x ray radioluminescence of Ce3+-doped Ba3MgSi2O8

Ce3+-doped Ba3MgSi2O8 phosphors were prepared by a solid-state reaction route. The photoluminescence properties in the vacuum ultraviolet-vis spectral range and the x ray excited radioluminescence were investigated. Ce3+ ions were found to enter three different sites in the host lattice. Five excitation bands and two emission bands of Ce(1)3+...

Position controlled nanowires for infrared single photon emission

We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum...

Lanthanide 4f-level location in lanthanide doped and cerium-lanthanide codoped NaLaF4 by photo- and thermoluminescence

Photo- and thermoluminescence (TL) spectra of NaLaF4:Ln3+ (Ln = Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm) and NaLaF4:Ce3+, Ln3+ (Ln = Nd,Sm,Ho,Er,Tm) are presented and used together with the empirical Dorenbos model in order to establish the 4f energy level positions of all tri- and divalent lanthanide ions doped in NaLaF4. The information will be...

High-resolution luminescence spectroscopy study of down-conversion routes in NaGdF4:Nd3+ and NaGdF4:Tm3+ using synchrotron radiation

Cerium-doped barium halide scintillators for x-ray and ?-ray detections

Single crystals of Ce-activated BaCl2, BaBr2, and BaI2 were investigated under x-ray and ?-ray excitation. The Ce3+-related x-ray excited luminescence in BaBr2 shifts significantly to longer wavelengths upon increasing the doping level from 0.1% to 1%. In Ce-activated BaCl2 only a slight shift can be observed. BaI2 does not show any Ce3+-related...

Vacuum ultraviolet-ultraviolet and x-ray excited luminescence properties of Ba3Gd(BO3)3:Ce3+

The phosphors Ba3Gd(BO3)3:Ce3+ were prepared by a solid-state reaction technique at high temperature. The vacuum ultraviolet-ultraviolet and visible spectroscopic properties of the phosphors together with decay time curves are investigated and discussed. The spectroscopic properties are explained by occupancy of Ce3+ at two different Gd sites in...

Location of lanthanide impurity levels in the III-V semiconductor GaN

Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...

High-light-output scintillator for photodiode readout: LuI3:Ce3+

In this paper, we investigated the scintillation properties of LuI3:Ce3+. Radioluminescence, light output, energy resolution, and ?-scintillation decay are reported. We find an extremely high light output of 98?000±10?000?photons/MeV. LuI3:Ce3+ also gives a very high electron-hole (e-h) pair response when it is coupled with an avalanche...