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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)
Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....
journal article 2009
document
Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)
The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were...
journal article 2009
document
Zhang, Jian (author), Sokolovskij, R. (author), Chen, Ganhui (author), Zhu, Yumeng (author), Qi, Yongle (author), Lin, Xinpeng (author), Li, Wenmao (author), Zhang, G. (author), Jiang, Yu-Long (author), Yu, Hongyu (author)
In this paper, a method to extend the detection range of hydrogen sulfide (H<sub>2</sub>S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H<sub>2</sub>S exposure in dry air. A pre...
journal article 2019