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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015
document
Mata Pavia, J. (author), Wolf, M. (author), Charbon, E. (author)
Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel’s surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanche diode (SPAD) imager to enhance its sensitivity. The benefit and limitations of these...
journal article 2014
document
Mandai, S. (author), Fishburn, M.W. (author), Maruyama, Y. (author), Charbon, E. (author)
We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...
journal article 2012